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| SKiiP 1003GB171-2DW I. Power section 2 * SKiiP503GB171CT per phase Absolute maximum ratings Symbol Conditions 1) Values 1700 1200 20 1000 (750) 1000 (750) 8640 373 -40...+150 (125) 4000 2 * 500 Units V V V A A A 2 kA s C V A IGBT VCES VCC Operating DC link voltage VGES IC Theat sink = 25 (70) C Inverse diode IF Theat sink = 25 (70) C I FSM Tj = 150 C, tp = 10ms; sin 2 I t (Diode) Diode, Tj = 150 C, 10ms Tj , (Tstg) Visol AC, 1min. 3) I C-package Theat sink = 70C, Tterm =115C (R) SKiiP(R) 3 SK integrated intelligent Power PACK 2-pack SKiiP 1003GB171-2DW 2) Target data housing S23 Characteristics Symbol IGBT 5) VCEsat VCEO rCE Eon + Eoff I CES LCE R CC-EE 4) Conditions 1) min. - - - - - - - - - - - - - - - - typ. max. Units V V m mJ mJ mA nH m V V m mJ mJ C/W C/W C/W A A I C = 600A, Tj = 25 (125)C VGE = 15V; Tj = 25 (125) C VGE = 15V; Tj = 25 (125) C I C=600A Vcc=900V Tj=125C Vcc=1200V VGE=0,VCE=V CES,Tj =25(125) C top, bottom resistance, terminal-chip 2,7 (3,1) 3,2 1,5 (1,6) 1,7 (1,8) 2,1 (2,8) 2,7 (3,3) 600 - 885 - 2,4 (144) - 5 - 0,20 - 2,0 (1,8) 2,3 1,5 (1,2) 1,7 (1,4) 1,0 (1,2) 1,2 (1,3) 72 - 105 - - - - 2 * 400 2 * 500 0,028 0,055 0,013 Inverse diode 5) VF = VEC I F = 600A; Tj = 25(125) C VTO Tj = 25 (125) C rT Tj = 25 (125) C I C=600A Vcc=900V 4) ERR Tj=125C Vcc=1200V Thermal characteristics R thjs per IGBT R thjs per diode 2) R thsa W: NWK 40; 8l/min; 50%glyc. Current sensor I p RMS Ta=100 C , Vsupply = 15V I pmax RMS t 2 s, Ta=100 C Mechanical data M1 DC terminals, SI Units M2 AC terminals, SI Units Features * SKiiP technology inside - pressure contact of ceramic to heat sink; low thermal impedance - pressure contact of main electric terminals - pressure contact of auxiliary electric terminals - increased thermal cycling capability - low stray inductance - homogenous current distribution * CAL diode technology * integrated current sensor * integrated temperature sensor * high power density 1) 2) 4 8 - - 6 10 Nm Nm 3) 4) 5) 8) Theatsink = 25 C, unless otherwise specified D integrated gate driver U with DC-bus voltage measurement (option for GB) L mounted on standard heat sink for forced air cooling W mounted on standard liquid cooled heat sink Tterm = temperature of terminal with SKiiP 3 gate driver Measured at chip level external paralleling necessary This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee, expressed or implied is made regarding delivery, performance or suitability. (c)by SEMIKRON 25.01.01 09:41 B 7 - 23 |
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